STL105DN4LF7AG Overview
This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Order code STL105DN4LF7AG Table 1: Device summary Marking Package 105DN4L PowerFLAT™ 5x6 double island January 2018 DocID031358 Rev 1 This is information on a product in full...
STL105DN4LF7AG Key Features
- AEC-Q101 qualified
- Among the lowest RDS(on) on the market
- Excellent FoM (figure of merit)
- Low Crss/Ciss ratio for EMI immunity
- High avalanche ruggedness
- Wettable flank package