STN3P6F6 Datasheet, STMicroelectronics

Order code STN3P6F6 VDS -60 V RDS(on) max. 0.16 Ω ID -3 A
* Very low on-resistance
* Very low gate charge
* High avalanche ruggedness
* Low gate drive.

* Switching applications Description This device is a P-channel Power MOSFET developed using the STripFET™ F6 techno.

This device is a P-channel Power MOSFET developed using the STripFET™ F6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. S(3) Int_schem_P_ch_nTnZ_SOT_223 Order code STN3P6F6 Tabl.