STMicroelectronics STN6N60M2
This device is an N-channel Power MOSFET developed using MDmesh M2 technology.| Part No. | STN6N60M2 |
|---|---|
| Datasheet | STN6N60M2 Download |
| Manufacturer |  STMicroelectronics |
| Description | 600V 5.5A N-Channel Power MOSFET |
| Buy | Stock & Price |
FEATURES
Order code VDS STN6N60M2 600 V● Extremely low gate charge
● Excellent output capacitance (Coss) profile
● 100% avalanche tested
● Zener-protected RDS(on) max. 1.25 Ω ID 5.5 A D(3)
APPLICATIONS
● Switching applications G(1)DESCRIPTION
Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it S(2) NG1D3S2_SOT223 suitable for the most demanding high efficiency converters. Product status link STN6N60M2 Product summary Order code STN6N60M2 Marking 6N60M2 Package SOT223-2 Packing Tape and reel DS12926 - Rev 2 - May 2020 For further information contact your local STMicroelectronics sales office. 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VGS Gate-source voltage ID (1) Drain current (continuous) at TC = 25 °C ID (1) Drain current (continuous) at TC = 100 °C IDM (2) Drain current (pulsed) PTOT Total power dissipation at TS = 25 °C dv/dt(3) Peak diode recovery voltage slope dv/dt(4) MOSFET dv/dt ruggedness TJ Operating junction temperature range Tstg Storage temperature range 1.
