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STP100N10F7 Datasheet

N-channel Power MOSFET

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STB100N10F7, STD100N10F7, STF100N10F7
STI100N10F7, STP100N10F7
Datasheet
N-channel 100 V, 6.8 mΩ typ., 80 A STripFET™ F7 Power MOSFETs
in D2PAK, DPAK, TO-220FP, I2PAK and TO-220 packages
TAB
13
D2PAK
TAB
TAB
23
1
DPAK
TAB
123
TO-220FP
123
I2PAK
1 23
TO-220
D(2, TAB)
G(1)
S(3)
AM01475v1_noZen
Product status links
STB100N10F7
STD100N10F7
STF100N10F7
STI100N10F7
STP100N10F7
Features
Order codes VDS RDS(on) max.
STB100N10F7
STD100N10F7
STF100N10F7
100 V
8.0 mΩ
STI100N10F7
STP100N10F7
• Among the lowest RDS(on) on the market
• Excellent FoM (figure of merit)
• Low Crss/Ciss ratio for EMI immunity
• High avalanche ruggedness
ID
80 A
80 A
45 A
80 A
80 A
Package
D2PAK
DPAK
TO-220FP
I2PAK
TO-220
Applications
• Switching applications
Description
These N-channel Power MOSFETs utilize STripFET™ F7 technology with an
enhanced trench gate structure that results in very low on-state resistance, while also
reducing internal capacitance and gate charge for faster and more efficient switching.
DS9291 - Rev 5 - June 2018
For further information contact your local STMicroelectronics sales office.
www.st.com


STMicroelectronics Electronic Components Datasheet

STP100N10F7 Datasheet

N-channel Power MOSFET

No Preview Available !

STB100N10F7,STD100N10F7,STF100N10F7,STI100N10F7,STP100N10F7
Electrical ratings
1 Electrical ratings
Symbol
Table 1. Absolute maximum ratings
Value
Parameter
DPAK
TO-220FP
VDS Drain-source voltage
VGS Gate-source voltage
Drain current (continuous) at TC = 25 °C
ID
Drain current (continuous) at TC = 100 °C
IDM(2)
Drain current (pulsed)
PTOT(1)
Total dissipation at TC = 25 °C
VISO
Insulation withstand voltage (RMS) from all
three leads to external heatsink
(t = 1 s, TC = 25 °C)
TJ Operating junction temperature
Tstg Storage temperature range
1. This value is limited by package.
2. Pulse width is limited by safe operating area.
80
62
320
120
100
±20
45(1)
32(1)
180
30
2.5
-55 to 175
TO-220
D2PAK
I2PAK
80
70
320
150
Unit
V
V
A
A
A
W
kV
°C
°C
Table 2. Thermal resistance
Symbol
Parameter
D2PAK
Rthj-case Thermal resistance junction-case
1
Rthj-amb Thermal resistance junction-ambient
Rthj-pcb(1) Thermal resistance junction-pcb
30
1. When mounted on an 1-inch2 FR-4 board, 2oz CU, t < 10 s.
Value
DPAK
TO-220FP
TO-220
I2PAK
1.25 5
1
62.5
50
Unit
°C/W
°C/W
°C/W
Symbol
EAS
Table 3. Avalanche characteristics
Parameter
Single pulse avalanche energy
(TJ = 25 °C, L = 3.5 mH, IAS = 15 A, VDD = 50 V, VGS = 10 V)
Value
400
Unit
mJ
DS9291 - Rev 5
page 2/28


Part Number STP100N10F7
Description N-channel Power MOSFET
Maker STMicroelectronics
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STP100N10F7 Datasheet PDF






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