STP100N10F7
Features
Order codes
RDS(on) max.
STB100N10F7
80 A
STD100N10F7
80 A
STF100N10F7
100 V
8.0 mΩ
45 A
STI100N10F7
80 A
80 A
- Among the lowest RDS(on) on the market
- Excellent Fo M (figure of merit)
- Low Crss/Ciss ratio for EMI immunity
- High avalanche ruggedness
Package D2PAK DPAK TO-220FP I2PAK TO-220
Applications
- Switching applications
Description
These N-channel Power MOSFETs utilize STrip FET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
Product status links STB100N10F7 STD100N10F7 STF100N10F7 STI100N10F7 STP100N10F7
DS9291
- Rev 6
- March 2022 For further information contact your local STMicroelectronics sales office.
.st.
STB100N10F7,STD100N10F7,STF100N10F7,STI100N10F7,STP100N10F7
Electrical ratings
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
Drain-so...
