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STP110N8F6 Datasheet

N-CHANNEL POWER MOSFET

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STP110N8F6
N-channel 80 V, 0.0056 typ.,110 A, STripFET™ F6
Power MOSFET in a TO-220 package
Datasheet - production data
Features
Order code VDS RDS(on)max ID PTOT
TAB STP110N8F6 80 V 0.0065 110 A 200 W
3
2
1
TO-220
Figure 1. Internal schematic diagram
' 7$%
* 
Very low on-resistance
Very low gate charge
High avalanche ruggedness
Low gate drive power loss
Applications
Switching applications
Description
This device is an N-channel Power MOSFET
developed using the STripFET™ F6 technology
with a new trench gate structure. The resulting
Power MOSFET exhibits very low RDS(on) in all
packages.
6 
Order code
STP110N8F6
$0Y
Table 1. Device summary
Marking
Package
110N8F6
TO-220
Packing
Tube
December 2014
This is information on a product in full production.
DocID026831 Rev 2
1/13
www.st.com


STMicroelectronics Electronic Components Datasheet

STP110N8F6 Datasheet

N-CHANNEL POWER MOSFET

No Preview Available !

Contents
Contents
STP110N8F6
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4 Package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4.1 TO-220 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
2/13 DocID026831 Rev 2


Part Number STP110N8F6
Description N-CHANNEL POWER MOSFET
Maker STMicroelectronics
PDF Download

STP110N8F6 Datasheet PDF






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