STP110N8F6 - N-CHANNEL POWER MOSFET

STMicroelectronics

Datasheet Details

This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure.

The resulting Power MOSFET exhibits very low RDS(on) in all packages.

6 Order code STP110N8F6 $0Y Table 1.

STP110N8F6 N-channel 80 V, 0.0056 Ω typ.,110 A, STripFET™ F6 Power MOSFET in a TO-220 package Datasheet - production.

Order code VDS RDS(on)max ID PTOT TAB STP110N8F6 80 V 0.0065 Ω 110 A 200 W 3 2 1 TO-220 Figure 1. Internal schematic diagram '7$%.
.
Very low on-resistance.
Very low gate charge.
High avalanche ruggedness.
Low gate drive power loss.

Brand Logo	Part Number	Description	Manufacturer
	STP110N8F6	N-Channel MOSFET	INCHANGE