STP110N8F6 Overview
Key Features
- Very low on-resistance
- Very low gate charge
- High avalanche ruggedness
- Low gate drive power loss
- 100% avalanche tested
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
| Part | STP110N8F6 |
|---|---|
| Description | N-Channel MOSFET |
| Category | MOSFET |
| Manufacturer | Inchange Semiconductor |
| Size | 223.66 KB |
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| STP110N8F6 | STMicroelectronics | N-CHANNEL POWER MOSFET |
| STP110N8F7 | STMicroelectronics | N-channel Power MOSFET |