Datasheet4U Logo Datasheet4U.com

STP110N8F6 - N-Channel MOSFET

Key Features

  • Very low on-resistance.
  • Very low gate charge.
  • High avalanche ruggedness.
  • Low gate drive power loss.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
STP110N8F6 N-CHANNEL POWER MOSFET STMicroelectronics
STP110N8F7 N-channel Power MOSFET STMicroelectronics
STP110N10F7 N-CHANNEL POWER MOSFET STMicroelectronics
STP110N55F6 N-CHANNEL POWER MOSFET STMicroelectronics
STP110N7F6 N-CHANNEL POWER MOSFET STMicroelectronics

Other Datasheets by Inchange Semiconductor

Part Number Description
STP110N8F7 N-Channel MOSFET
STP110N10F7 N-Channel MOSFET
STP11N65M5 N-Channel MOSFET
STP11NM60 N-Channel MOSFET
STP11NM60FD N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Isc N-Channel MOSFET Transistor INCHANGE Semiconductor STP110N8F6 ·FEATURES ·Very low on-resistance ·Very low gate charge ·High avalanche ruggedness ·Low gate drive power loss ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 80 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous@TC=25℃ TC=100℃ Drain Current-Single Pulsed ±20 110 85 440 PD Total Dissipation 200 Tj Operating Junction Temperature -55~175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a) Channel-to-ambient thermal resista