| Part Number | STP110N8F6 Datasheet |
|---|---|
| Manufacturer | STMicroelectronics |
| Overview |
This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.
6
Order.
Order code VDS RDS(on)max ID PTOT TAB STP110N8F6 80 V 0.0065 Ω 110 A 200 W
3 2 1
TO-220
Figure 1. Internal schematic diagram
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* Very low on-resistance * Very low gate charge * High avalanche ruggedness * Low gate drive power loss Applications * Switching applications Description This. |
STP110N8F6 Datasheet and Specifications PDF
The STP110N8F6 is a N-CHANNEL POWER MOSFET.
| Part Number | STP110N8F6 Datasheet |
|---|---|
| Description | N-Channel MOSFET |
| Manufacturer | Inchange Semiconductor |
| Overview |
Isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
STP110N8F6
·FEATURES ·Very low on-resistance ·Very low gate charge ·High avalanche ruggedness ·Low gate drive power loss ·100% avalanche tested.
*Very low on-resistance *Very low gate charge *High avalanche ruggedness *Low gate drive power loss *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation *APPLICATIONS *Switching applications *ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER . |