STP110N8F6 Overview
Description
This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.
Key Features
- Internal ' 7$% *
- Very low on-resistance
- Very low gate charge
- High avalanche ruggedness
- Low gate drive power loss
