STMicroelectronics STP110N8F6
This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.| Part No. | STP110N8F6 |
|---|---|
| Datasheet | STP110N8F6 Download |
| Manufacturer |  STMicroelectronics |
| Description | N-CHANNEL POWER MOSFET |
| Buy | Stock & Price |
FEATURES
Order code VDS RDS(on)max ID PTOT TAB STP110N8F6 80 V 0.0065 Ω 110 A 200 W 3 2 1 TO-220 Figure 1. Internal schematic diagram ' 7$% *● Very low on-resistance
● Very low gate charge
● High avalanche ruggedness
● Low gate drive power loss
APPLICATIONS
● Switching applicationsDESCRIPTION
6 Order code STP110N8F6 $0 Y Table 1. Device summary Marking Package 110N8F6 TO-220 Packing Tube December 2014 This is information on a product in full production. DocID026831 Rev 2 1/13 Contents Contents STP110N8F6 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Ele
