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STP110N8F6 - N-CHANNEL POWER MOSFET

General Description

This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure.

The resulting Power MOSFET exhibits very low RDS(on) in all packages.

Table 1.

Key Features

  • Order code VDS RDS(on)max ID PTOT TAB STP110N8F6 80 V 0.0065 Ω 110 A 200 W 3 2 1 TO-220 Figure 1. Internal schematic diagram ' 7$% .
  •  .
  • Very low on-resistance.
  • Very low gate charge.
  • High avalanche ruggedness.
  • Low gate drive power loss.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STP110N8F6 N-channel 80 V, 0.0056 Ω typ.,110 A, STripFET™ F6 Power MOSFET in a TO-220 package Datasheet - production data Features Order code VDS RDS(on)max ID PTOT TAB STP110N8F6 80 V 0.0065 Ω 110 A 200 W 3 2 1 TO-220 Figure 1. Internal schematic diagram ' 7$% *  • Very low on-resistance • Very low gate charge • High avalanche ruggedness • Low gate drive power loss Applications • Switching applications Description This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. 6  Order code STP110N8F6 $0Y Table 1. Device summary Marking Package 110N8F6 TO-220 Packing Tube December 2014 This is information on a product in full production.