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STP11NM60N - N-CHANNEL Power MOSFET

Description

This series of devices is realized with the second generation of MDmesh™ Technology.

This revolutionary Power MOSFET associates a new vertical structure to the Company’s strip layout to yield one of the world’s lowest on-resistance and gate charge.

Features

  • Type STD11NM60N STD11NM60N-1 STF11NM60N STP11NM60N VDSS (@Tjmax) 650V 650V 650V 650V RDS(on).

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www.DataSheet4U.com STD11NM60N - STD11NM60N-1 STP11NM60N - STF11NM60N N-channel 600V - 0.37Ω - 10A - TO-220 - TO-220FP- IPAK - DPAK Second generation MDmesh™ Power MOSFET General features Type STD11NM60N STD11NM60N-1 STF11NM60N STP11NM60N VDSS (@Tjmax) 650V 650V 650V 650V RDS(on) <0.45Ω <0.45Ω <0.45Ω <0.45Ω ID 3 3 2 1 2 1 10A 10A 10A (1) 10A TO-220 IPAK 3 1. Limited only by maximum temperature allowed ■ ■ ■ 1 3 100% avalanche tested Low input capacitance and gate charge Low gate input resistancel DPAK 1 2 TO-220FP Description This series of devices is realized with the second generation of MDmesh™ Technology. This revolutionary Power MOSFET associates a new vertical structure to the Company’s strip layout to yield one of the world’s lowest on-resistance and gate charge.
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