STP12N50M2 Overview
Description
This device is an N-channel Power MOSFET developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. This revolutionary Power MOSFET associates a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge.
Key Features
- Extremely low gate charge
- Lower RDS(on) x area vs previous generation
- Low gate input resistance
- 100% avalanche tested
- Zener-protected Figure
