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STP12N60M2 - N-channel Power MOSFET

Description

This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology.

Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters.

Features

  • Order code VDS RDS(on) max. ID PTOT STP12N60M2 600 V 0.450 Ω 9 A 85 W.
  • Extremely low gate charge.
  • Excellent output capacitance (COSS) profile.
  • 100% avalanche tested.
  • Zener-protected.

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Full PDF Text Transcription

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STP12N60M2 N-channel 600 V, 0.395 Ω typ., 9 A MDmesh™ M2 Power MOSFET in a TO-220 package Datasheet - production data Figure 1: Internal schematic diagram Features Order code VDS RDS(on) max. ID PTOT STP12N60M2 600 V 0.450 Ω 9 A 85 W • Extremely low gate charge • Excellent output capacitance (COSS) profile • 100% avalanche tested • Zener-protected Applications • Switching applications Description This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters.
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