STP12N60M2
Features
Order code
RDS(on) max. ID
PTOT
STP12N60M2 600 V 0.450 Ω 9 A 85 W
- Extremely low gate charge
- Excellent output capacitance (COSS) profile
- 100% avalanche tested
- Zener-protected
Applications
- Switching applications
Description
This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters.
Order code STP12N60M2
Table 1: Device summary
Marking
Package
12N60M2
TO-220
Packing Tube
May 2015
Doc ID027902 Rev 1
This is information on a product in full production.
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Contents
Contents
1 Electrical ratings 3
2 Electrical characteristics 4
2.1 Electrical characteristics...
