This series of devices is realized with the second generation of MDmesh™ technology.
This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge.
Full PDF Text Transcription for STP12NM50N (Reference)
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STP12NM50N. For precise diagrams, and layout, please refer to the original PDF.
O-220 /FP- D2PAK - DPAK Second generation MDmesh™ Power MOSFET General features Type STB12NM50N STD12NM50N STF12NM50N STP12NM50N ■ ■ ■ VDSS (@Tjmax) 550V 550V 550V 550V RDS(on) <0.38Ω <0.38Ω <0.38Ω <0.38Ω ID 11A 11A 11A (1) 11A 3 1 1 3 2 3 1 DPAK TO-220 100% avalanche tested Low input capacitance and gate charge Low gate input resistancel D²PAK 3 1 2 TO-220FP Description This series of devices is realized with the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge.
STP12NM50N Datasheet
