STP12NM50 Datasheet | STMicroelectronics

STB12NM50T4, STP12NM50, STP12NM50FP N-channel 500 V, 300 mΩ typ., 12 A MDmesh Power MOSFETs in a D²PAK, TO-220 and TO-220FP packages 3 1 D2 PAK 3 2 1 TO-220FP TO-220 1 23 D(2, TAB) Features Order codes STB12NM50T4 500 V STP12NM50FP - 100% avalanche tested - Low input capacitance and gate charge - Low gate input resistance RDS(on) max. 350 mΩ Applications - Switching applications ID 12 A G(1) S(3) NG1D2TS3 Description These N-channel Power MOSFETs are developed using STMicroelectronics' revolutionary MDmesh technology, which associates the multiple drain process with the pany's PowerMESH horizontal layout. These devices offer extremely...