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STP12NM50 - N-CHANNEL Power MOSFET

General Description

These N-channel Power MOSFETs are developed using STMicroelectronics' revolutionary MDmesh technology, which associates the multiple drain process with the company's PowerMESH horizontal layout.

These devices offer extremely low onresistance, high dv/dt and excellent avalanche characteristics.

Key Features

  • Order codes VDS STB12NM50T4 STP12NM50 500 V STP12NM50FP.
  • 100% avalanche tested.
  • Low input capacitance and gate charge.
  • Low gate input resistance RDS(on) max. 350 mΩ.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STB12NM50T4, STP12NM50, STP12NM50FP Datasheet N-channel 500 V, 300 mΩ typ., 12 A MDmesh Power MOSFETs in a D²PAK, TO-220 and TO-220FP packages TAB 3 1 D2 PAK TAB 3 2 1 TO-220FP TO-220 1 23 D(2, TAB) Features Order codes VDS STB12NM50T4 STP12NM50 500 V STP12NM50FP • 100% avalanche tested • Low input capacitance and gate charge • Low gate input resistance RDS(on) max. 350 mΩ Applications • Switching applications ID 12 A G(1) S(3) NG1D2TS3 Description These N-channel Power MOSFETs are developed using STMicroelectronics' revolutionary MDmesh technology, which associates the multiple drain process with the company's PowerMESH horizontal layout. These devices offer extremely low onresistance, high dv/dt and excellent avalanche characteristics.