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STP12NM50N - N-channel Power MOSFET

General Description

This series of devices is realized with the second generation of MDmesh™ technology.

This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge.

Key Features

  • Type STB12NM50N STD12NM50N STF12NM50N STP12NM50N.
  • VDSS (@Tjmax) 550V 550V 550V 550V RDS(on).

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www.DataSheet4U.com STB12NM50N - STD12NM50N STF12NM50N - STP12NM50N N-channel 500V - 0.29Ω - 11A - TO-220 /FP- D2PAK - DPAK Second generation MDmesh™ Power MOSFET General features Type STB12NM50N STD12NM50N STF12NM50N STP12NM50N ■ ■ ■ VDSS (@Tjmax) 550V 550V 550V 550V RDS(on) <0.38Ω <0.38Ω <0.38Ω <0.38Ω ID 11A 11A 11A (1) 11A 3 1 1 3 2 3 1 DPAK TO-220 100% avalanche tested Low input capacitance and gate charge Low gate input resistancel D²PAK 3 1 2 TO-220FP Description This series of devices is realized with the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge.