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STP12NM50FP - N-CHANNEL Power MOSFET

Download the STP12NM50FP datasheet PDF. This datasheet also covers the STP12NM50 variant, as both devices belong to the same n-channel power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

These N-channel Power MOSFETs are developed using STMicroelectronics' revolutionary MDmesh technology, which associates the multiple drain process with the company's PowerMESH horizontal layout.

These devices offer extremely low onresistance, high dv/dt and excellent avalanche characteristics.

Key Features

  • Order codes VDS STB12NM50T4 STP12NM50 500 V STP12NM50FP.
  • 100% avalanche tested.
  • Low input capacitance and gate charge.
  • Low gate input resistance RDS(on) max. 350 mΩ.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (STP12NM50_STMicroelectronics.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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Other Datasheets by STMicroelectronics

Part Number Description
STP12NM50N N-channel Power MOSFET
STP12NM60N N-channel Power MOSFET
STP12N120K5 N-channel 1200V 12A Power MOSFET
STP12N50M2 N-channel Power MOSFET
STP12N60M2 N-channel Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
STB12NM50T4, STP12NM50, STP12NM50FP Datasheet N-channel 500 V, 300 mΩ typ., 12 A MDmesh Power MOSFETs in a D²PAK, TO-220 and TO-220FP packages TAB 3 1 D2 PAK TAB 3 2 1 TO-220FP TO-220 1 23 D(2, TAB) Features Order codes VDS STB12NM50T4 STP12NM50 500 V STP12NM50FP • 100% avalanche tested • Low input capacitance and gate charge • Low gate input resistance RDS(on) max. 350 mΩ Applications • Switching applications ID 12 A G(1) S(3) NG1D2TS3 Description These N-channel Power MOSFETs are developed using STMicroelectronics' revolutionary MDmesh technology, which associates the multiple drain process with the company's PowerMESH horizontal layout. These devices offer extremely low onresistance, high dv/dt and excellent avalanche characteristics.