STP16NM50N mosfet equivalent, n-channel power mosfet.
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Type
VDSS (@Tjmax) 550 V 550 V 550 V 550 V 550 V
RDS(on) max 0.26 Ω 0.26 Ω 0.26 Ω 0.26 Ω 0.26 Ω
ID
1
3
3 12
STB16NM50N STI16NM50N STF16NM50N ST.
Description
This series of devices is designed using the second generation of MDmesh™ technology. This revolutionary Po.
This series of devices is designed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. .
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