STP16NM50N Key Features
- 100% avalanche tested Low input capacitance and gate charge Low gate input resistance
- Switching
- Part: STP16NM50N
- Manufacturer: STMicroelectronics (official site)
- Size: 595.30 KB
Related STMicroelectronics Datasheets
| Part Number | Description |
|---|---|
| STP16N50M2 | N-CHANNEL POWER MOSFET |
| STP16N60M2 | N-channel Power MOSFET |
| STP16N65M2 | N-channel Power MOSFET |
| STP16N65M5 | N-channel Power MOSFET |
| STP16NF25 | N-CHANNEL POWER MOSFET |
STP16NM50N Description
This series of devices is designed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the pany’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.