STP18N60DM2
STP18N60DM2 is N-channel Power MOSFET manufactured by STMicroelectronics.
Features
Order code STP18N60DM2
VDS 600 V
RDS(on) max. 0.295 Ω
ID 12 A
- Fast-recovery body diode
- Extremely low gate charge and input capacitance
- Low on-resistance
- 100% avalanche tested
- Extremely high dv/dt ruggedness
- Zener-protected
Applications
- Switching applications
Description
This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) bined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.
S(3)
Order code STP18N60DM2
AM15572v1_tab
Table 1: Device summary Marking
18N60DM2
Package TO-220
Packing Tube
January 2016
Doc ID027674 Rev 3
This is information on a product in full production.
1/13
.st.
Contents
Contents
1 Electrical ratings 3
2 Electrical characteristics 4
2.1 Electrical characteristics (curves) 6
3 Test circuits 8
4 Package information 9
4.1 TO-220 type A package information 10
5 Revision history 12
2/13 Doc ID027674 Rev 3
1 Electrical ratings
Symbol
Table 2: Absolute maximum ratings...
