Datasheet Summary
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N-CHANNEL 40V
- 3.9 mΩ
- 120A D2PAK/I2PAK/TO-220 STripFET™ II POWER MOSFET
TYPE STB190NF04/-1 STP190NF04 s s s
STP190NF04 STB190NF04 STB190NF04-1
PRELIMINARY DATA
VDSS 40 V 40 V
RDS(on) <0.0043 Ω <0.0043 Ω
ID 120 A 120 A
3 1
TYPICAL RDS(on) =3.9 mΩ STANDARD THRESHOLD DRIVE 100% AVALANCHE TESTED
3 12
DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s HIGH CURENT, HIGH...