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STP25NM60N - N-channel Power MOSFET

Datasheet Summary

Description

This series of devices is realized with the second generation of MDmesh™ technology.

This revolutionary MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge.

Features

  • Type STB25NM60N STB25NM60N-1 STF25NM60N STP25NM60N STW25NM60N VDSS (@Tjmax) 650 V 650 V 650 V 650 V 650 V RDS(on) max < 0.160 Ω < 0.160 Ω < 0.160 Ω < 0.160 Ω < 0.160 Ω ID 3 3 1 2 21 A 21 A 21 A(1) 21 A 21 A 1 2 TO-220FP 3 1 TO-220 D²PAK 3 12 2 1 3 1. Limited only by maximum temperature allowed.
  • 100% avalanche tested Low input capacitance and gate charge Low gate input resistance I²PAK TO-247 Figure 1. Internal schematic diagram.

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Datasheet Details

Part number STP25NM60N
Manufacturer STMicroelectronics
File Size 618.54 KB
Description N-channel Power MOSFET
Datasheet download datasheet STP25NM60N Datasheet
Additional preview pages of the STP25NM60N datasheet.

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Full PDF Text Transcription

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STB25NM60Nx - STF25NM60N STP25NM60N - STW25NM60N www.datasheet4u.com N-channel 600 V, 0.130 Ω , 21 A, MDmesh™ II Power MOSFET TO-220, TO-220FP, I2PAK, D2PAK, TO-247 Features Type STB25NM60N STB25NM60N-1 STF25NM60N STP25NM60N STW25NM60N VDSS (@Tjmax) 650 V 650 V 650 V 650 V 650 V RDS(on) max < 0.160 Ω < 0.160 Ω < 0.160 Ω < 0.160 Ω < 0.160 Ω ID 3 3 1 2 21 A 21 A 21 A(1) 21 A 21 A 1 2 TO-220FP 3 1 TO-220 D²PAK 3 12 2 1 3 1. Limited only by maximum temperature allowed ■ ■ ■ 100% avalanche tested Low input capacitance and gate charge Low gate input resistance I²PAK TO-247 Figure 1. Internal schematic diagram Application ■ Switching applications Description This series of devices is realized with the second generation of MDmesh™ technology.
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