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STMicroelectronics Electronic Components Datasheet

STP35N60DM2 Datasheet

N-channel Power MOSFET

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STP35N60DM2
N-channel 600 V, 0.094 Ω typ., 28 A MDmesh™ DM2
Power MOSFET in a TO-220 package
Datasheet - production data
Figure 1: Internal schematic diagram
Features
Order code
VDS
STP35N60DM2 600 V
RDS(on)
max.
0.110 Ω
ID PTOT
28 A 210 W
Fast-recovery body diode
Extremely low gate charge and input
capacitance
Low on-resistance
100% avalanche tested
Extremely high dv/dt ruggedness
Zener-protected
Applications
Switching applications
Description
This high voltage N-channel Power MOSFET is
part of the MDmesh™ DM2 fast recovery diode
series. It offers very low recovery charge (Qrr)
and time (trr) combined with low RDS(on), rendering
it suitable for the most demanding high efficiency
converters and ideal for bridge topologies and
ZVS phase-shift converters.
Order code
STP35N60DM2
Table 1: Device summary
Marking
35N60DM2
Package
TO-220
Packing
Tube
September 2015
DocID028348 Rev 1
This is information on a product in full production.
1/13
www.st.com


STMicroelectronics Electronic Components Datasheet

STP35N60DM2 Datasheet

N-channel Power MOSFET

No Preview Available !

Contents
Contents
STP35N60DM2
1 Electrical ratings ............................................................................. 3
2 Electrical characteristics ................................................................ 4
2.1 Electrical characteristics (curves)...................................................... 6
3 Test circuits ..................................................................................... 8
4 Package information ....................................................................... 9
4.1 TO-220 type A package information................................................ 10
5 Revision history ............................................................................ 12
2/13 DocID028348 Rev 1


Part Number STP35N60DM2
Description N-channel Power MOSFET
Maker STMicroelectronics
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STP35N60DM2 Datasheet PDF






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