STP35N60DM2
STP35N60DM2 is N-channel Power MOSFET manufactured by STMicroelectronics.
Features
Order code
STP35N60DM2 600 V
RDS(on) max.
0.110 Ω
ID PTOT 28 A 210 W
- Fast-recovery body diode
- Extremely low gate charge and input capacitance
- Low on-resistance
- 100% avalanche tested
- Extremely high dv/dt ruggedness
- Zener-protected
Applications
- Switching applications
Description
This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) bined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.
Order code STP35N60DM2
Table 1: Device summary Marking
35N60DM2
Package TO-220
Packing Tube
September 2015
Doc ID028348 Rev 1
This is information on a product in full production.
1/13
.st.
Contents
Contents
1 Electrical ratings 3
2 Electrical characteristics 4
2.1 Electrical characteristics (curves) 6
3 Test circuits 8
4 Package information 9
4.1 TO-220 type A package information 10
5 Revision history 12
2/13 Doc ID028348 Rev 1
1 Electrical ratings
Symbol
Table 2: Absolute maximum ratings...
