STP35N60DM2 Datasheet - STMicroelectronics

N-channel Power MOSFET

STP35N60DM2 Features

* Order code VDS STP35N60DM2 600 V RDS(on) max. 0.110 Ω ID PTOT 28 A 210 W

* Fast-recovery body diode

* Extremely low gate charge and input capacitance

* Low on-resistance

* 100% avalanche tested

* Extremely high dv/dt ruggedness

* Zener-protected Applications

* Switc

STP35N60DM2 General Description

This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shi.

STP35N60DM2 Datasheet (594.06 KB)

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Datasheet Details

Part number:

STP35N60DM2

Manufacturer:

STMicroelectronics ↗

File Size:

594.06 KB

Description:

N-channel power mosfet.
STP35N60DM2 N-channel 600 V, 0.094 Ω typ., 28 A MDmesh™ DM2 Power MOSFET in a TO-220 package Datasheet - production data Figure 1: Internal schemati.

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STP35N60DM2 Features

STP35N60DM2 General Description

Datasheet Details

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