Datasheet4U Logo Datasheet4U.com

STP360N4F6 - N-channel Power MOSFET

General Description

These devices are N-channel Power MOSFETs developed using the STripFET™ F6 technology with a new trench gate structure.

The resulting Power MOSFETs exhibit very low RDS(on) in all packages.

Table 1.

Key Features

  • TAB TAB 123 I²PAK 3 2 1 TO-220 Figure 1. Internal schematic diagram ' 7$% .
  •  6  Order codes STI360N4F6 STP360N4F6 VDS 40 V RDS(on) max. ID 1.8 mΩ 120 A.
  • Designed for automotive.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
STP36N05L N-CHANNEL MOSFET TRANSISTOR ST Microelectronics
STP36N05LFI N-CHANNEL MOSFET TRANSISTOR ST Microelectronics
STP36N06 N-CHANNEL MOSFET TRANSISTOR ST Microelectronics
STP36N06FI N-CHANNEL MOSFET TRANSISTOR ST Microelectronics
STP36N06L N-CHANNEL MOSFET TRANSISTOR ST Microelectronics

Other Datasheets by STMicroelectronics

Part Number Description
STP36N55M5 N-CHANNEL POWER MOSFET
STP36N60M6 N-CHANNEL POWER MOSFET
STP30N05FI N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
STP30N06 N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
STP30N10F7 N-CHANNEL POWER MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
STI360N4F6, STP360N4F6 Automotive-grade N-channel 40 V, 1.46 mΩ typ., 120 A STripFET™ F6 Power MOSFETs in I²PAK and TO-220 packages Datasheet - production data Features TAB TAB 123 I²PAK 3 2 1 TO-220 Figure 1. Internal schematic diagram ' 7$% *  6  Order codes STI360N4F6 STP360N4F6 VDS 40 V RDS(on) max. ID 1.8 mΩ 120 A • Designed for automotive applications and AEC-Q101 qualified • Very low on-resistance • Low gate charge • High avalanche ruggedness • Low gate drive power loss Applications • Switching applications Description These devices are N-channel Power MOSFETs developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFETs exhibit very low RDS(on) in all packages.