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STMicroelectronics Electronic Components Datasheet

STP36N06LFI Datasheet

N-CHANNEL MOSFET TRANSISTOR

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t4U.com STP36N06L
e STP36N06LFI
She N - CHANNEL ENHANCEMENT MODE
ta POWER MOS TRANSISTOR
w.DaTYPE
w STP36N05L
w STP36N05LFI
VDSS
60 V
60 V
RDS(on)
< 0.04
< 0.04
ID
36 A
21 A
s TYPICAL RDS(on) = 0.033
s AVALANCHE RUGGED TECHNOLOGY
ms 100% AVALANCHE TESTED
os REPETITIVE AVALANCHE DATA AT 100oC
s LOW GATE CHARGE
.cs HIGH CURRENT CAPABILITY
s LOGIC LEVEL COMPATIBLE INPUT
s 175oC OPERATING TEMPERATURE
Us APPLICATION ORIENTED
t4CHARACTERIZATION
APPLICATIONS
es HIGH CURRENT, HIGH SPEED SWITCHING
s SOLENOID AND RELAY DRIVERS
es REGULATORS
hs DC-DC & DC-AC CONVERTERS
s MOTOR CONTROL, AUDIO AMPLIFIERS
Ss AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
3
2
1
TO-220
3
2
1
ISOWATT220
INTERNAL SCHEMATIC DIAGRAM
ataABSOLUTE MAXIMUM RATINGS
.DSymbol
Parameter
wVDS
VDGR
wVGS
wID
Drain-source Voltage (VGS = 0)
Drain- gate Voltage (RGS = 20 k)
Gate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Value
STP36N06L
STP36N06LFI
60
60
± 15
36 21
Unit
V
V
V
A
ID Drain Current (continuous) at Tc = 100 oC
IDM() Drain Current (pulsed)
Ptot Total Dissipation at Tc = 25 oC
Derating Factor
VISO Insulation Withstand Voltage (DC)
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
() Pulse width limited by safe operating area
November 1996
25 14
om144 144
.c120 40
U0.8 0.27
t42000
ee-65 to 175
www.DataSh175
A
A
W
W/oC
V
oC
oC
1/10


STMicroelectronics Electronic Components Datasheet

STP36N06LFI Datasheet

N-CHANNEL MOSFET TRANSISTOR

No Preview Available !

STP36N06L/FI
THERMAL DATA
Rthj-case
Rthj-amb
Rt h c- sin k
Tl
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead Temperature For Soldering Purpose
TO-220
1.25
ISOWATT220
3.75
62.5
0.5
300
oC/W
oC/W
oC/W
oC
AVALANCHE CHARACTERISTICS
Symbol
IAR
EAS
EAR
IAR
Parameter
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max, δ < 1%)
Single Pulse Avalanche Energy
(starting Tj = 25 oC, ID = IAR, VDD = 25 V)
Repetitive Avalanche Energy
(pulse width limited by Tj max, δ < 1%)
Avalanche Current, Repetitive or Not-Repetitive
(Tc = 100 oC, pulse width limited by Tj max, δ < 1%)
Max Value
36
240
60
25
Unit
A
mJ
mJ
A
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
Symbol
V(BR)DSS
IDSS
IGSS
Parameter
Test Conditions
Drain-source
Breakdown Voltage
ID = 250 µA VGS = 0
Zero Gate Voltage
VDS = Max Rating
Drain Current (VGS = 0) VDS = Max Rating x 0.8 Tc = 125 oC
Gate-body Leakage
Current (VDS = 0)
VGS = ± 15 V
Min.
60
Typ.
Max.
Unit
V
1
10
± 100
µA
µA
nA
ON ()
Symbol
VGS(th)
RDS(on)
ID(on)
Parameter
Test Conditions
Gate Threshold Voltage VDS = VGS ID = 250 µA
Static Drain-source On VGS = 5 V ID = 18 A
Resistance
On State Drain Current VDS > ID(on) x RDS(on)max
VGS = 10 V
Min.
1
Typ.
1.6
0.033
Max.
2.5
0.04
Unit
V
36 A
DYNAMIC
Symbol
gfs ()
Ciss
Coss
Crss
Parameter
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS > ID(on) x RDS(on)max ID = 18 A
Min.
12
Typ.
24
Max.
Unit
S
VDS = 25 V f = 1 MHz VGS = 0
1350
450
130
1800
600
200
pF
pF
pF
2/10


Part Number STP36N06LFI
Description N-CHANNEL MOSFET TRANSISTOR
Maker ST Microelectronics
Total Page 10 Pages
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