900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf




STMicroelectronics Electronic Components Datasheet

STP38N06 Datasheet

N-CHANNEL ENHANCEMENT POWER MOS TRANSISTOR

No Preview Available !

www.DataSheet4U.com
STP38N06
N - CHANNEL ENHANCEMENT MODE
”ULTRA HIGH DENSITY” POWER MOS TRANSISTOR
TYPE
ST P38N06
VDSS
60 V
RDS(on)
< 0.03
ID
38 A (*)
PRELIMINARY DATA
s TYPICAL RDS(on) = 0.026
s AVALANCHE RUGGED TECHNOLOGY
s 100% AVALANCHE TESTED
s REPETITIVE AVALANCHE DATA AT 100oC
s HIGH CURRENT CAPABILITY
s 175oC OPERATING TEMPERATURE
s HIGH dV/dt RUGGEDNESS
s APPLICATION ORIENTED
CHARACTERIZATION
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s POWER MOTOR CONTROL
s DC-DC & DC-AC CONVERTERS
s SYNCRONOUS RECTIFICATION
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR Drain- gate Voltage (RGS = 20 k)
VGS
ID
ID
IDM()
Ptot
Gate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
Drain Current (pulsed)
Total Dissipation at Tc = 25 oC
Derating Factor
dV/dt(1 ) Peak Diode Recovery voltage slope
Tstg St orage Temperature
Tj Max. Operating Junction Temperature
() Pulse width limited by safe operating area
March 1996
Value
60
60
± 20
38
26
152
90
0.6
7
-65 to 175
175
Uni t
V
V
V
A
A
A
W
W/oC
V/ ns
oC
oC
1/11


STMicroelectronics Electronic Components Datasheet

STP38N06 Datasheet

N-CHANNEL ENHANCEMENT POWER MOS TRANSISTOR

No Preview Available !

www.DataSheet4U.com
STP38N06
THERMAL DATA
Rt hj-ca se
Rt hj- amb
Rthc- si nk
Tl
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Thermal Resistance Case-sink
Maximum Lead T emperature For Soldering Purpose
Max
Max
Typ
1.66
62.5
0.5
300
oC/W
oC/W
oC/W
oC
AVALANCHE CHARACTERISTICS
Symb ol
IAR
E AS
EAR
IAR
Parameter
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max, δ < 1%)
Single Pulse Avalanche Energy
(starting Tj = 25 oC, ID = IAR, VDD = 25 V)
Repetitive Avalanche Energy
(pulse width limited by Tj max, δ < 1%)
Avalanche Current, Repetitive or Not-Repetitive
(Tc = 100 oC, pulse width limited by Tj max, δ < 1%)
Max Value
38
300
75
26
Unit
A
mJ
mJ
A
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
Symb ol
V(BR)DSS
IDSS
IGSS
P a ram et er
Test Conditions
Dr ain - s o ur c e
Breakdown Voltage
ID = 250 µA VGS = 0
Zero Gate Voltage
VDS = Max Rating
Drain Current (VGS = 0) VDS = Max Rating x 0. 8 Tc = 125 oC
Gate-body Leakage
Current (VDS = 0)
VGS = ± 20 V
Min.
60
Typ . Max.
250
1000
± 100
Unit
V
µA
µA
nA
ON ()
Symb ol
V GS(th )
RDS( o n )
ID(o n)
P a ram et er
Test Conditions
Gate T hreshold Voltage VDS = VGS ID = 250 µA
St atic Drain-source On VGS = 10V ID = 19 A
Re s is ta nc e
VGS = 10V ID = 19 A Tc = 100oC
On State Drain Current VDS > ID(on) x RDS(on)max
VGS = 10 V
Min.
2
38
Typ .
3
0.026
M a x.
4
0.03
0.06
Unit
V
A
DYNAMIC
Symb ol
gfs ()
Ciss
Coss
Crss
P a ram et er
Forward
T r ans c on duc ta nc e
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS > ID(on) x RDS(on)max ID = 19 A
Min.
14
Typ .
19
M a x.
Unit
S
VDS = 25 V f = 1 MHz VGS = 0
2000
350
80
2800
450
120
pF
pF
pF
2/11


Part Number STP38N06
Description N-CHANNEL ENHANCEMENT POWER MOS TRANSISTOR
Maker STMicroelectronics
Total Page 11 Pages
PDF Download

STP38N06 Datasheet PDF

View PDF for Mobile








Similar Datasheet

1 STP38N06 N-CHANNEL ENHANCEMENT POWER MOS TRANSISTOR
STMicroelectronics





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy