900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf




STMicroelectronics Electronic Components Datasheet

STP3NA90FI Datasheet

N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR

No Preview Available !

STP3NA90
STP3NA90FI
N - CHANNEL ENHANCEMENT MODE
FAST POWER MOS TRANSISTOR
PRELIMINARY DATA
TYPE
STP3NA90
STP3NA90FI
VDSS
900 V
900 V
RDS(on)
< 5.3
< 5.3
ID
3A
1.9 A
s TYPICAL RDS(on) = 4.4
s ± 30V GATE TO SOURCE VOLTAGE RATING
s 100% AVALANCHE TESTED
s REPETITIVE AVALANCHE DATA AT 100oC
s LOW INTRINSIC CAPACITANCES
s GATE CHARGE MINIMIZED
s REDUCED THRESHOLD VOLTAGE SPREAD
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITCH MODE POWER SUPPLIES (SMPS)
s DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
3
2
1
TO-220
3
2
1
ISOWATT220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS
VDGR
Drain-Source Voltage (Vgs = 0)
Drain-Gate Voltage (Rgs = 20 K)
VGS Gate-Source Voltage
ID Drain-Current (continuous) at Tc = 25oC
ID Drain-Current (continuous) at Tc = 100oC
IDM() Drain-Current (Pulsed)
Ptot Total Dissipation at Tc = 25oC
Derating Factor
VISO Insulation Withstand Voltage (DC)
Tstg Storage Temperature
Tj Max Operating Junction Temperature
()Pulse width limited by safe operating area
March 1996
Value
STP3NA90
STP3NA90FI
900
900
± 30
3 1.9
2 1.2
12 12
100 40
1.25
0.32
- 2000
-65 to 150
150
Unit
V
V
V
A
A
A
W
W/oC
V
oC
oC
1/6


STMicroelectronics Electronic Components Datasheet

STP3NA90FI Datasheet

N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR

No Preview Available !

STP3NA90/FI
THERMAL DATA
Rthj-case
Rthj-amb
Rthc-sink
Tl
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead Temperature For Soldering Purpose
TO220
0.8
ISOWATT220
3.12
62.5
0.5
300
oC/W
oC/W
oC/W
oC
AVALANCHE CHARACTERISTICS
Symbol
IAR
EAS
EAR
IAR
Parameter
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max, δ < 1%)
Single Pulse Avalanche Energy
(starting Tj = 25 oC, ID = IAR, VDD = 50 V)
Repetitive Avalanche Energy
(pulse width limited by Tj max, δ < 1%)
Avalanche Current, Repetitive or Not-Repetitive
(Tc = 100 oC, pulse width limited by Tj max, δ < 1%)
Max Value
3
45
2
2
Unit
A
mJ
mJ
A
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
Symbol
V(BR)DSS
IDSS
IGSS
Parameter
Test Conditions
Drain-source
Breakdown Voltage
ID = 250 µA
VGS = 0
Zero Gate Voltage
VDS = Max Rating
Drain Current (VGS = 0) VDS = Max Rating x 0.8 Tc = 125 oC
Gate-Source Leakage VGS = ± 30 V
Current (VDS = 0)
Min.
900
Typ.
Max.
250
1000
±100
Unit
V
µA
µA
mA
ON ()
Symbol
VGS(th)
RDS(on)
ID(on)
Parameter
Test Conditions
Gate Threshold Voltage VDS = VGS ID = 250 µA
Static Drain-source On VGS = 10 V ID = 1.5 A
Resistance
VGS = 10 V ID = 1.5 A Tc = 100oC
On State Drain Current VDS > ID(on) x RDS(on)max
VGS = 10 V
Min.
2.25
3
Typ.
3
4.4
Max.
3.75
5.3
10.6
Unit
V
A
DYNAMIC
Symbol
gfs ()
Ciss
C oss
Crss
Parameter
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS > ID(on) x RDS(on)max ID = 1.5 A
Min.
1.5
Typ.
2.8
Max.
Unit
S
VDS = 25 V f = 1 MHz VGS = 0
690 900
80 105
20 30
pF
pF
pF
2/6


Part Number STP3NA90FI
Description N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
Maker ST Microelectronics
Total Page 6 Pages
PDF Download

STP3NA90FI Datasheet PDF

View PDF for Mobile








Similar Datasheet

1 STP3NA90FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
ST Microelectronics





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy