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STMicroelectronics Electronic Components Datasheet

STP3NB60 Datasheet

N - CHANNEL PowerMESH MOSFET

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t4U.com STP3NB60
ee STP3NB60FP
Sh N - CHANNEL ENHANCEMENT MODE
ata PowerMESHMOSFET
w.DTYPE
w STP3NB60
w STP3NB60FP
VDSS
600 V
600 V
RDS(on)
<3.6
< 3.6
ID
3.3 A
2.2 A
s TYPICAL RDS(on) = 3.3
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
ms VERY LOW INTRINSIC CAPACITANCES
os GATE CHARGE MINIMIZED
.cDESCRIPTION
Using the latest high voltage MESH OVERLAY
process, SGS-Thomson has designed an
Uadvanced family of power MOSFETs with
t4outstanding performances. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
elowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
eand switching characteristics.
hAPPLICATIONS
Ss HIGH CURRENT, HIGH SPEED SWITCHING
s SWITCH MODE POWER SUPPLIES (SMPS)
tas DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
aPOWER SUPPLIES AND MOTOR DRIVE
.DABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
wVDS
wVDGR
wVGS
Drain-source Voltage (VGS = 0)
Drain- gate Voltage (RGS = 20 k)
Gate-source Voltage
3
2
1
TO-220
3
2
1
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
Value
STP3NB60 STP3NB60FP
600
600
± 30
Unit
V
V
V
ID
ID
IDM()
Ptot
dv/dt(1)
VISO
Tstg
Tj
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
Drain Current (pulsed)
Total Dissipation at Tc = 25 oC
Derating Factor
Peak Diode Recovery voltage slope
Insulation Withstand Voltage (DC)
Storage Temperature
Max. Operating Junction Temperature
March 1998
3.3 2.2
m2.1 1.4
o13.2
13.2
.c80 35
U0.64
0.28
t44.5 4.5
ee2000
h-65 to 150
www.DataS150
A
A
A
W
W/oC
V/ns
V
oC
oC
1/9


STMicroelectronics Electronic Components Datasheet

STP3NB60 Datasheet

N - CHANNEL PowerMESH MOSFET

No Preview Available !

STP3NB60/FP
THERMAL DATA
Rthj-case
Rthj-amb
Rthc-sink
Tl
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead Temperature For Soldering Purpose
TO-220
1.56
TO220-FP
3.57
62.5
0.5
300
oC/W
oC/W
oC/W
oC
AVALANCHE CHARACTERISTICS
Symbol
IAR
EAS
Parameter
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max, δ < 1%)
Single Pulse Avalanche Energy
(starting Tj = 25 oC, ID = IAR, VDD = 50 V)
Max Value
3.3
100
Unit
A
mJ
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
Symbol
V(BR)DSS
IDSS
IGSS
Parameter
Test Conditions
Drain-source
Breakdown Voltage
ID = 250 µA VGS = 0
Zero Gate Voltage
VDS = Max Rating
Drain Current (VGS = 0) VDS = Max Rating
Tc = 125 oC
Gate-body Leakage
Current (VDS = 0)
VGS = ± 30 V
Min.
600
Typ. Max.
1
50
± 100
Unit
V
µA
µA
nA
ON ()
Symbol
VGS(th)
RDS(on)
ID(on)
Parameter
Test Conditions
Gate Threshold
Voltage
VDS = VGS ID = 250 µA
Static Drain-source On VGS = 10V ID = 1.6 A
Resistance
On State Drain Current VDS > ID(on) x RDS(on)max
VGS = 10 V
Min.
3
Typ.
4
Max.
5
Unit
V
3.3 3.6
3.3 A
DYNAMIC
Symbol
gfs ()
Ciss
C oss
Crss
Parameter
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS > ID(on) x RDS(on)max ID = 1.6 A
Min.
1.2
Typ.
2
Max.
Unit
S
VDS = 25 V f = 1 MHz VGS = 0
400 520
57 77
79
pF
pF
pF
2/9


Part Number STP3NB60
Description N - CHANNEL PowerMESH MOSFET
Maker ST Microelectronics
Total Page 9 Pages
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