Datasheet Summary
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S a t e e h
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STP3NB90 STP3NB90FP
N-CHANNEL 900V
- 4 Ω
- 3.5 A TO-220/TO-220FP PowerMesh™ MOSFET
R DS(on) < 4.2 Ω < 4.2 Ω ID 3.5 A 3.5 A Pw 110 W 35 W
TYPE
VDSS 900 V 900 V
STP3NB90 STP3NB90FP s s s s s
TYPICAL RDS(on) = 4 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES
3 1 2
TO-220
DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the pany’s proprieraty edge termination structure, gives the lowest RDS(on) per area, exceptional...