STP400N4F6 Overview
Description
These devices are N-channel Power MOSFETs developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFETs exhibits the lowest RDS(on) in all packages.
Key Features
- Limited by package
- Low gate charge
- Very low on-resistance
- High avalanche ruggedness
