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STP40N20 Datasheet

N-CHANNEL MOSFET

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STP40N20
STB40N20 - STW40N20
N-CHANNEL 200V - 0.038- 40A TO-220/TO-247/D2PAK
LOW GATE CHARGE STripFET™ MOSFET
Table 1: General Features
TYPE
VDSS RDS(on)
ID
Pw
www.DataSheet4U.cSomTP40N20
STW40N20
STB40N20
200 V < 0.045
200 V < 0.045
200 V < 0.045
40 A
40 A
40 A
160 W
160 W
160 W
TYPICAL RDS(on) = 0.038
GATE CHARGE MINIMIZED
VERY LOW INTRINSIC CAPACITANCES
VERY GOOD MANUFACTURING
REPEATIBILITY
EXCELLENT FIGURE OF MERIT (RDS*Qg)
100% AVALANCHE TESTED
DESCRIPTION
This MOSFET series realized with STMicroelec-
tronics unique STripFET process has specifically
been designed to minimize input capacitance and
gate charge. It is therefore suitable as primary
switch in advanced high-efficiency isolated DC-DC
converters.
Figure 1: Package
3
2
1
TO-220
3
2
1
TO-247
3
1
D2PAK
Figure 2: Internal Schematic Diagram
APPLICATIONS
HIGH CURRENT, HIGH SPEED SWITCHING
UPS
Table 2: Order Codes
SALES TYPE
STP40N20
STW40N20
STB40N20
MARKING
P40N20
W40N20
B40N20
PACKAGE
TO-220
TO-247
D2PAK
June 2005
PACKAGING
TUBE
TUBE
TAPE & REEL
Rev. 3
1/13


STMicroelectronics Electronic Components Datasheet

STP40N20 Datasheet

N-CHANNEL MOSFET

No Preview Available !

STB40N20 - STP40N20 - STW40N20
Table 3: Absolute Maximum ratings
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 k)
VGS Gate- source Voltage
ID Drain Current (continuous) at TC = 25°C
ID Drain Current (continuous) at TC = 100°C
IDM ( ) Drain Current (pulsed)
www.DataSheet4U.com PTOT
Total Dissipation at TC = 25°C
Derating Factor
dv/dt (1) Peak Diode Recovery voltage slope
Tj Operating Junction Temperature
Tstg Storage Temperature
( ) Pulse width limited by safe operating area
(1) ISD 40A, di/dt 200 A/µs, VDD V(BR)DSS, Tj TJMAX.
Table 4: Thermal Data
Rthj-case
Rthj-amb
Tl
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Maximum Lead Temperature For Soldering
Purpose
Table 5: Avalanche Characteristics
Symbol
Parameter
IAR Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
EAS Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
Value
200
200
± 20
40
25
160
160
1.28
12
-55 to 150
Unit
V
V
V
A
A
A
W
W/°C
V/ns
°C
TO-220/
62.5
0.78
300
TO-247
50
°C/W
°C/W
°C
Max Value
40
230
Unit
A
mJ
2/13


Part Number STP40N20
Description N-CHANNEL MOSFET
Maker STMicroelectronics
Total Page 13 Pages
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