Datasheet4U Logo Datasheet4U.com

STP40N20 - Low gate charge STripFET Power MOSFET

General Description

This MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge.

It is therefore suitable as primary switch in advanced highefficiency isolated DC-DC converters.

Key Features

  • Type STB40N20 STP40N20 STP40N20FP STW40N20.
  • VDSS 200V 200V 200V 200V RDS(on).

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
STP40N03L-20 N-Channel MOSFET ST Microelectronics
STP40NF03L N-CHANNEL POWER MOSFET ST Microelectronics
STP40NF10L N-CHANNEL POWER MOSFET ST Microelectronics
STP40NF12 N-CHANNEL POWER MOSFET ST Microelectronics
STP413D P-Channel Enhancement Mode MOSFET Stanson Technology

Other Datasheets by STMicroelectronics

Part Number Description
STP40N20 N-CHANNEL MOSFET
STP40N06 N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
STP40N06FI N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
STP40N10 N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
STP40N10FI N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
STP40N20 - STF40N20 STB40N20 - STW40N20 N-channel 200V - 0.038Ω -40A- D2PAK/TO-220/TO-220FP/TO-247 Low gate charge STripFET™ Power MOSFET General features Type STB40N20 STP40N20 STP40N20FP STW40N20 ■ ■ ■ ■ ■ VDSS 200V 200V 200V 200V RDS(on) <0.045Ω <0.045Ω <0.045Ω <0.045Ω ID 40A 40A 40A 40A PW 160W 160W 160W 40W TO-220 1 2 3 3 1 D2PAK Gate charge minimized Very low intrinsic capacitances Very good manufacturing repeatibility Excellent figure of merit (RDS*Qg) 100% avalanche tested 1 2 3 TO-220FP Description This MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced highefficiency isolated DC-DC converters.