Datasheet Summary
STB40N20
- STW40N20
N-CHANNEL 200V
- 0.038Ω
- 40A TO-220/TO-247/D2PAK LOW GATE CHARGE STripFET™ MOSFET
Table 1: General Features
TYPE
.. STP40N20
Figure 1: Package
ID 40 A 40 A 40 A Pw 160 W 160 W 160 W
3 1 2
1 2 3
VDSS 200 V 200 V 200 V
RDS(on) < 0.045 Ω < 0.045 Ω < 0.045 Ω
STW40N20 STB40N20
- -
- -
- -
TYPICAL RDS(on) = 0.038 Ω GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING REPEATIBILITY EXCELLENT FIGURE OF MERIT (RDS- Qg) 100% AVALANCHE TESTED
TO-220
TO-247
DESCRIPTION This MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge....