STP45N60DM2AG
Features
Order code STP45N60DM2AG
VDS @ TJmax.
650 V
RDS(on) max.
0.093 Ω
ID PTOT 34 A 250 W
Figure 1: Internal schematic diagram
- Designed for automotive applications and AEC-Q101 qualified
- Fast-recovery body diode
- Extremely low gate charge and input capacitance
- Low on-resistance
- 100% avalanche tested
- Extremely high dv/dt ruggedness
- Zener-protected
Applications
- Switching applications
Order code STP45N60DM2AG
Description
This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) bined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.
Table 1: Device summary
Marking
Package
Packing
45N60DM2
TO-220
Tube
July 2015
Doc ID028065 Rev 1
This is information on a product in full production.
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Contents
Contents
1 Electrical ratings...
