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STP4N52K3 - N-channel Power MOSFET

General Description

These SuperMESH3™ Power MOSFETs are the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure.

Key Features

  • Order codes VDSS RDS(on) max ID Pw STD4N52K3 STF4N52K3 STP4N52K3 STU4N52K3 525 V < 2.6 Ω 2.5 A 45 W 2.5 A 20 W (1) 2.5 A 45 W 2.5 A 45 W 1. Limited by package.
  • 100% avalanche tested.
  • Extremely high dv/dt capability.
  • Gate charge minimized.
  • Very low intrinsic capacitance.
  • Improved diode reverse recovery characteristics.
  • Zener-protected.

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Full PDF Text Transcription for STP4N52K3 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for STP4N52K3. For precise diagrams, and layout, please refer to the original PDF.

STD4N52K3, STF4N52K3, STP4N52K3, STU4N52K3 N-channel 525 V, 2.5 A, 2.1 Ω typ., SuperMESH3™ Power MOSFET in DPAK, TO-220FP, TO-220 and IPAK packages Datasheet — production...

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FET in DPAK, TO-220FP, TO-220 and IPAK packages Datasheet — production data Features Order codes VDSS RDS(on) max ID Pw STD4N52K3 STF4N52K3 STP4N52K3 STU4N52K3 525 V < 2.6 Ω 2.5 A 45 W 2.5 A 20 W (1) 2.5 A 45 W 2.5 A 45 W 1. Limited by package ■ 100% avalanche tested ■ Extremely high dv/dt capability ■ Gate charge minimized ■ Very low intrinsic capacitance ■ Improved diode reverse recovery characteristics ■ Zener-protected Application ■ Switching applications Description These SuperMESH3™ Power MOSFETs are the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertica

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