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STMicroelectronics Electronic Components Datasheet

STP4NB50FP Datasheet

N-CHANNEL MOSFET

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STP4NB50
STP4NB50FP
N-CHANNEL 500V - 2.5- 3.8A - TO-220/TO-220FP
PowerMesh™ MOSFET
PRELIMINARY DATA
TYPE
VDSS
RDS(on)
ID
STP4NB50
STP4NB50FP
500 V
500 V
< 2.8
< 2.8
3.8 A
2.5 A
s TYPICAL RDS(on) = 2.5
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s VERY LOW INTRINSIC CAPACITANCES
s GATE CHARGE MINIMIZED
DESCRIPTION
Using the latest high voltage MESH OVERLAY™
process, STMicroelectronics has designed an ad-
vanced family of power MOSFETs with outstanding
performances. The new patent pending strip layout
coupled with the Company’s proprieraty edge termi-
nation structure, gives the lowest RDS(on) per area,
exceptional avalanche and dv/dt capabilities and
unrivalled gate charge and switching characteris-
tics.
3
2
1
TO-220
3
2
1
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITH MODE POWER SUPPLIES (SMPS)
s DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS
VDGR
VGS
ID
ID
IDM ( )
PTOT
Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 k)
Gate- source Voltage
Drain Current (continuous) at TC = 25°C
Drain Current (continuous) at TC = 100°C
Drain Current (pulsed)
Total Dissipation at TC = 25°C
Derating Factor
dv/dt
Peak Diode Recovery voltage slope
VISO
Insulation Withstand Voltage (DC)
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(•)Pulse width limited by safe operating area
April 2003
Value
STP4NB50 STP4NB50FP
500
Unit
V
500 V
±30 V
3.8 2.5 A
2.4 1.6 A
15.2
15.2
A
80
0.64
4.5
-
35
0.28
2500
W
W/°C
V/ns
V
–65 to 150
°C
150 °C
(1)ISD 4 A, di/dt 200A/µs, VDD V(BR)DSS, Tj TJMAX
1/7


STMicroelectronics Electronic Components Datasheet

STP4NB50FP Datasheet

N-CHANNEL MOSFET

No Preview Available !

STP4NB50 - STP4NB50FP
THERMAL DATA
Rthj-case
Rthj-amb
Tl
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Maximum Lead Temperature For Soldering Purpose
TO-220
1.56
62.5
300
TO-220FP
3.57
°C/W
°C/W
°C
AVALANCHE CHARACTERISTICS
Symbol
Parameter
IAR Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
EAS Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
Max Value
3.8
220
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
Parameter
Test Conditions
Min. Typ. Max.
V(BR)DSS Drain-source
Breakdown Voltage
ID = 250 µA, VGS = 0
500
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating, TC = 125 °C
1
50
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ±30V
±100
Unit
A
mJ
Unit
V
µA
µA
nA
ON (1)
Symbol
VGS(th)
RDS(on)
Parameter
Gate Threshold Voltage
Static Drain-source On
Resistance
Test Conditions
VDS = VGS, ID = 250µA
VGS = 10V, ID = 1.9 A
Min.
2
Typ.
3
2.5
Max.
4
2.8
Unit
V
DYNAMIC
Symbol
gfs (1)
Parameter
Forward Transconductance
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS > ID(on) x RDS(on)max,
ID = 1.9 A
VDS = 25V, f = 1 MHz, VGS = 0
Min.
Typ.
2.3
400
62
7.5
Max.
Unit
S
pF
pF
pF
2/7


Part Number STP4NB50FP
Description N-CHANNEL MOSFET
Maker ST Microelectronics
Total Page 7 Pages
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