Datasheet Details
| Part number | STP4NC80ZFP |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 445.83 KB |
| Description | N-CHANNEL MOSFET |
| Download | STP4NC80ZFP Download (PDF) |
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Download the STP4NC80ZFP datasheet PDF. This datasheet also includes the STP4NC80Z variant, as both parts are published together in a single manufacturer document.
| Part number | STP4NC80ZFP |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 445.83 KB |
| Description | N-CHANNEL MOSFET |
| Download | STP4NC80ZFP Download (PDF) |
|
|
|
The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-toback Zener diodes between gate and source.
Such arrangement gives extra ESD capability with higher ruggedness performance as requested by a large variety of single-switch applications.
APPLICATIONS SINGLE-ENDED SMPS IN MONITORS, COMPUTER AND INDUSTRIAL APPLICATION s WELDING EQUIPMENT s 1 I2PAK (Tabless TO-220) 23 ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM (q ) PTOT IGS VESD(G-S) dv/dt(1) VISO Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Gate-source Current Gate source ESD(HBM-C=100pF, R=15KΩ) Peak Diode Recovery voltage slope Insulation Winthstand Voltage (DC) Storage Temperature Max.
STP4NC80Z - STP4NC80ZFP STB4NC80Z - STB4NC80Z-1 N-CHANNEL 800V - 2.4Ω - 4A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH™III MOSFET TYPE STP4NC80Z/FP www.DataSheet4U.com STB4NC80Z/-1 s s VDSS 800V 800V RDS(on) < 2.8 Ω < 2.8 Ω ID 4A 4A 2 1 3 1 2 3 s s s TYPICAL RDS(on) = 2.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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STP4NC80Z | N-CHANNEL MOSFET | ST Microelectronics |
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