STP50NE10 Datasheet, ST Microelectronics

Type VDSS RDS(on) ID STP50NE10 100V <0.027Ω 50A )
* Exceptional high dv/dt capability t(s
* 100% avalanche tested c
* Low gate charge at 100 oC du
* A.

du - O
* Switching application 3 2 1 TO-220 Internal schematic diagram OObbssoolleettee PPrrooduct(s)Order codes P.

lete ucThis Power MOSFET is the latest development of dSTMicroelectronis unique "Single Feature Size™" so rostrip-based process. The resulting transistor b Pshows extremely high packing density for low on- resistance, rugged avalanche characteristics.