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STMicroelectronics Electronic Components Datasheet

STP50NE10L Datasheet

N-Channel Enhancement Mode Power MOS Transistor

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® STP50NE10L
N - CHANNEL 100V - 0.020- 50A TO-220
STripFETPOWER MOSFET
TYPE
VDSS
RDS(on)
STP50NE10L
100 V <0.025
s TYPICAL RDS(on) = 0.020
s EXCEPTIONAL dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s LOW GATE CHARGE AT 100 oC
s APPLICATION ORIENTED
CHARACTERIZATION
ID
50 A
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronics unique "Single Feature
Size" strip-based process. The resulting
transistor shows extremely high packing density
for low on-resistance, rugged avalanche
characteristics and less critical alignment steps
therefore a remarkable manufacturing
reproducibility.
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SOLENOID AND RELAY DRIVERS
s MOTOR CONTROL, AUDIO AMPLIFIERS
s DC-DC & DC-AC CONVERTERS
s AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR Drain- gate Voltage (RGS = 20 k)
VGS
ID
ID
IDM()
Ptot
Gate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
Drain Current (pulsed)
Total Dissipation at Tc = 25 oC
Derating Factor
dv/dt (1) Peak Diode Recovery voltage slope
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
() Pulse width limited by safe operating area
May 1999
Value
Unit
100 V
100 V
± 20
V
50 A
35 A
200 A
150 W
1 W/oC
6 V/ns
-65 to 175
oC
175 oC
(1) ISD 50 A, di/dt 275 A/µs, VDD V(BR)DSS, Tj TJMAX
1/8


STMicroelectronics Electronic Components Datasheet

STP50NE10L Datasheet

N-Channel Enhancement Mode Power MOS Transistor

No Preview Available !

STP50NE10L
THERMAL DATA
Rthj-case
Rthj-amb
Rthc-sink
Tl
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead Temperature For Soldering Purpose
1
62.5
0.5
300
oC/W
oC/W
oC/W
oC
AVALANCHE CHARACTERISTICS
Symbol
IAR
EAS
Parameter
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
Single Pulse Avalanche Energy
(starting Tj = 25 oC, ID = IAR, VDD = 50 V)
Max Value
50
400
Unit
A
mJ
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
Symbol
V(BR)DSS
IDSS
IGSS
Parameter
Test Conditions
Drain-source
Breakdown Voltage
ID = 250 µA VGS = 0
Zero Gate Voltage
VDS = Max Rating
Drain Current (VGS = 0) VDS = Max Rating
Tc = 125 oC
Gate-body Leakage
Current (VDS = 0)
VGS = ± 20 V
Min.
100
Typ.
Max.
Unit
V
1
10
± 100
µA
µA
nA
ON ()
Symbol
VGS(th)
RDS(on)
ID(on)
Parameter
Test Conditions
Gate Threshold Voltage VDS = VGS ID = 250 µA
Static Drain-source On VGS = 10 V ID = 25 A
Resistance
VGS = 5 V ID = 25 A
On State Drain Current VDS > ID(on) x RDS(on)max
VGS = 10 V
Min.
1
50
Typ.
1.7
0.020
0.024
Max.
2.5
0.025
0.030
Unit
V
A
DYNAMIC
Symbol
gfs ()
Ciss
Coss
Crss
Parameter
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS > ID(on) x RDS(on)max ID =25 A
VDS = 25 V f = 1 MHz VGS = 0
Min.
Typ.
45
Max.
Unit
S
5000
500
180
pF
pF
pF
2/8


Part Number STP50NE10L
Description N-Channel Enhancement Mode Power MOS Transistor
Maker ST Microelectronics
Total Page 8 Pages
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