STP5N120
STP5N120 is N-Channel Power MOSFET manufactured by STMicroelectronics.
Features
Type
VDSS RDS(on)
STP5N120 1200 V < 3.5 Ω 4.7 A 160 W t(s)- 100% avalanche tested
- Extremely high dv/dt capability uc- ESD improved capability rod- New high voltage benchmark
- Gate charge minimized lete PApplication o- Switching applications Obs Description ) -The Super MESH™ series is obtained through an t(sextreme optimization of ST’s well established strip-based Power MESH™ layout. In addition to ucpushing on-resistance significantly down, special dcare is taken to ensure a very good dv/dt rocapability for the most demanding applications. PSuch series plements ST full range of high Obsoletevoltage Power MOSFETs.
3 2 1
TO-220
Figure 1. Internal schematic diagram
Table 1. Device summary Order code STP5N120
Marking 5N120
Package TO-220
Packaging Tube
November 2009
Doc ID 13530 Rev 2
1/12
.st.
Contents
Contents
1 Electrical ratings
- -
- -
- -
- - . . . . 3
2 Electrical characteristics
- -
- -
- -
- . . 4
2.1 Electrical characteristics (curves)
- -
- -
- . . . . 6
3 Test circuit
- -
- -
-...
