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STP5NK100Z - N-channel Power MOSFET

General Description

The new SuperMESH™ series of Power MOSFETS is the result of further design improvements on ST's well-established stripbased PowerMESH™ layout.

Key Features

  • Type STF5NK100Z STP5NK100Z STW5NK100Z VDSS (@TJMAX) RDS(on)max 1000 V < 3.7 Ω 1000 V < 3.7 Ω 1000 V < 3.7 Ω ID 3.5 A 3.5 A 3.5 A.
  • Extremely high dv/dt capability.
  • 100% avalanche tested.
  • Gate charge minimized.
  • Very low intrinsic capacitances.
  • Very good manufacturing repeatibility.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STP5NK100Z, STF5NK100Z STW5NK100Z N-channel 1000 V, 2.7 Ω, 3.5 A, TO-220, TO-220FP, TO-247 SuperMESH3™ Power MOSFET Features Type STF5NK100Z STP5NK100Z STW5NK100Z VDSS (@TJMAX) RDS(on)max 1000 V < 3.7 Ω 1000 V < 3.7 Ω 1000 V < 3.7 Ω ID 3.5 A 3.5 A 3.5 A ■ Extremely high dv/dt capability ■ 100% avalanche tested ■ Gate charge minimized ■ Very low intrinsic capacitances ■ Very good manufacturing repeatibility Applications ■ Switching application Description The new SuperMESH™ series of Power MOSFETS is the result of further design improvements on ST's well-established stripbased PowerMESH™ layout. In addition to significantly lower on-resistance, the device offers superior dv/dt capability to ensure optimal performance even in the most demanding applications.