STP60NS04ZB Datasheet, ST Microelectronics

Type VDSS STP60NS04ZB Clamped RDS(on) < 0.015Ω ID 60A
* 100% avalanche tested
* Low capacitance and gate charge
* 175 °C maximum junction temperature D.

* Switching application 3 2 1 TO-220 Internal schematic diagram Order codes Part number STP60NS04ZB Marking P60NS.

This fully clamped Power MOSFET is produced by using the latest advanced Company’s Mesh Overlay process which is based on a novel strip layout. The inherent benefits of the new technology coupled with the extra clamping capabilities make this product.