STP6N80K5 Datasheet, STMicroelectronics

TAB TO-220 1 23 D(2, TAB) Order code VDS STP6N80K5 800 V
* Industry’s lowest RDS(on) x area
* Industry’s best FoM (figure of merit)
* Ultra-low ga.

RDS(on) max. 1.6 Ω ID 4.5 A G(1)
* Switching applications Description S(3) This very high voltage N-channel P.

S(3) This very high voltage N-channel Power MOSFET is designed using MDmesh K5 AM01476v1_tab technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for appli.