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STP6N80K5 - N-Channel MOSFET

Key Features

  • Static drain-source on-resistance: RDS(on) ≤1.6Ω.
  • Enhancement mode.
  • Fast Switching Speed.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor STP6N80K5 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤1.6Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Be suitable for synchronous rectification for server and general purpose applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 800 VGS Gate-Source Voltage ±30 ID Drain Current-Continuous 4.5 IDM Drain Current-Single Pulsed 18 PD Total Dissipation @TC=25℃ 85 Tj Max.