STP6N80K5 Description
S(3) This very high voltage N-channel Power MOSFET is designed using MDmesh K5 AM01476v1_tab technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. STP6N80K5 Electrical ratings 1 Electrical ratings Table.
STP6N80K5 Key Features
- Industry’s lowest RDS(on) x area
- Industry’s best FoM (figure of merit)
- Ultra-low gate charge
- 100% avalanche tested
- Zener-protected