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STP6N80K5 - N-channel Power MOSFET

General Description

AM01476v1_tab technology based on an innovative proprietary vertical structure.

Key Features

  • TAB TO-220 1 23 D(2, TAB) Order code VDS STP6N80K5 800 V.
  • Industry’s lowest RDS(on) x area.
  • Industry’s best FoM (figure of merit).
  • Ultra-low gate charge.
  • 100% avalanche tested.
  • Zener-protected.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STP6N80K5 Datasheet N-channel 800 V, 1.3 Ω typ., 4.5 A MDmesh K5 Power MOSFET in a TO-220 package Features TAB TO-220 1 23 D(2, TAB) Order code VDS STP6N80K5 800 V • Industry’s lowest RDS(on) x area • Industry’s best FoM (figure of merit) • Ultra-low gate charge • 100% avalanche tested • Zener-protected Applications RDS(on) max. 1.6 Ω ID 4.5 A G(1) • Switching applications Description S(3) This very high voltage N-channel Power MOSFET is designed using MDmesh K5 AM01476v1_tab technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.