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STP6NK60Z - N-Channel MOSFET

Description

The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout.

In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications.

Features

  • Type STB6NK60Z STB6NK60Z-1 STP6NK60ZFP STP6NK60Z VDSS 600 V 600 V 600 V 600 V RDS(on) ID PW < 1.2 Ω 6 A 110 W < 1.2 Ω 6 A 110 W < 1.2 Ω 6 A 30 W < 1.2 Ω 6 A 110 W.
  • Extremely high dv/dt capability.
  • 100% avalanche tested.
  • Gate charge minimized.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STB6NK60Z - STB6NK60Z-1 STP6NK60ZFP - STP6NK60Z N-channel 600 V - 1 Ω - 6 A - TO-220/TO-220FP/D2PAK/I2PAK Zener-Protected SuperMESH™ Power MOSFET Features Type STB6NK60Z STB6NK60Z-1 STP6NK60ZFP STP6NK60Z VDSS 600 V 600 V 600 V 600 V RDS(on) ID PW < 1.2 Ω 6 A 110 W < 1.2 Ω 6 A 110 W < 1.2 Ω 6 A 30 W < 1.2 Ω 6 A 110 W ■ Extremely high dv/dt capability ■ 100% avalanche tested ■ Gate charge minimized Application ■ Switching applications Description The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. 3 2 1 TO-220 3 1 D²PAK 123 I²PAK 3 2 1 TO-220FP Figure 1.
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