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STP6NK60ZFP - N-CHANNEL MOSFET

Download the STP6NK60ZFP datasheet PDF. This datasheet also covers the STP6NK60Z variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout.

In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications.

Features

  • Type STB6NK60Z STB6NK60Z-1 STP6NK60ZFP STP6NK60Z VDSS 600 V 600 V 600 V 600 V RDS(on) ID PW < 1.2 Ω 6 A 110 W < 1.2 Ω 6 A 110 W < 1.2 Ω 6 A 30 W < 1.2 Ω 6 A 110 W.
  • Extremely high dv/dt capability.
  • 100% avalanche tested.
  • Gate charge minimized.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (STP6NK60Z_STMicroelectronics.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
STB6NK60Z - STB6NK60Z-1 STP6NK60ZFP - STP6NK60Z N-channel 600 V - 1 Ω - 6 A - TO-220/TO-220FP/D2PAK/I2PAK Zener-Protected SuperMESH™ Power MOSFET Features Type STB6NK60Z STB6NK60Z-1 STP6NK60ZFP STP6NK60Z VDSS 600 V 600 V 600 V 600 V RDS(on) ID PW < 1.2 Ω 6 A 110 W < 1.2 Ω 6 A 110 W < 1.2 Ω 6 A 30 W < 1.2 Ω 6 A 110 W ■ Extremely high dv/dt capability ■ 100% avalanche tested ■ Gate charge minimized Application ■ Switching applications Description The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. 3 2 1 TO-220 3 1 D²PAK 123 I²PAK 3 2 1 TO-220FP Figure 1.
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