STP90N4F3
Overview
This n-channel enhancement mode Power MOSFET is the latest refinement of STMicroelectronics unique “single feature size“ strip-based process with less critical alignment steps and therefore a remarkable manufacturing reproducibility. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and low gate charge.
- VDSS 40 V 40 V 40 V 40 V RDS(on) max < 6.5 mΩ < 6.5 mΩ < 6.5 mΩ < 6.5 mΩ
