STP90N6F6 Overview
This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.
N-channel Power MOSFET
| Part number | STP90N6F6 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 273.95 KB |
| Description | N-CHANNEL POWER MOSFET |
| Datasheet | STP90N6F6-STMicroelectronics.pdf |
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This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.
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