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STP90N55F4 - N-channel Power MOSFET

General Description

This device is an N-channel Power MOSFET developed using ST’s STripFET™ DeepGATE™ technology.

The device has a new gate structure and is specially designed to minimize on-state resistance to provide superior switching performance.

Figure 1.

Key Features

  • Type STP90N55F4 VDSS 55 V RDS(on) max < 0.008 Ω ID 90 A.
  • Exceptional dv/dt capability.
  • Extremely low on-resistance RDS(on).
  • 100% avalanche tested.

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Full PDF Text Transcription for STP90N55F4 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for STP90N55F4. For precise diagrams, and layout, please refer to the original PDF.

STP90N55F4 N-channel 55 V, 0.0064 Ω, 90 A, TO-220 STripFET™ DeepGATE™ Power MOSFET Features Type STP90N55F4 VDSS 55 V RDS(on) max < 0.008 Ω ID 90 A ■ Exceptional dv/dt ca...

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90N55F4 VDSS 55 V RDS(on) max < 0.008 Ω ID 90 A ■ Exceptional dv/dt capability ■ Extremely low on-resistance RDS(on) ■ 100% avalanche tested Applications ■ Switching applications Description This device is an N-channel Power MOSFET developed using ST’s STripFET™ DeepGATE™ technology. The device has a new gate structure and is specially designed to minimize on-state resistance to provide superior switching performance. TAB 3 2 1 TO-220 Figure 1. Internal schematic diagram $ 4!" ' Table 1. Device summary Order codes STP90N55F4 Marking 90N55F4 3 !-V Packages TO-220 Packaging Tube August 2011 Doc ID 022110 Rev 1 1

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