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STP90N6F6 - N-CHANNEL POWER MOSFET

General Description

This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure.

The resulting Power MOSFET exhibits very low RDS(on) in all packages.

Key Features

  • Order code STP90N6F6 Table 1: Device summary Marking Package 90N6F6 TO-220 Packaging Tube March 2015 DocID025190 Rev 3 This is information on a product in full production. 1/13 www. st. com Contents Contents STP90N6F6 1 Electrical ratings 3 2 Electrical characteristics.

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Full PDF Text Transcription for STP90N6F6 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for STP90N6F6. For precise diagrams, and layout, please refer to the original PDF.

STP90N6F6 N-channel 60 V, 0.0057 Ω typ., 90 A STripFET™ F6 Power MOSFET in a TO-220 package Datasheet - production data Figure 1: Internal schematic diagram Order code ST...

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t - production data Figure 1: Internal schematic diagram Order code STP90N6F6 VDS 60 V RDS(on) max. 0.0063 Ω ID 90 A PTOT 136 W • Very low on-resistance • Very low gate charge • High avalanche ruggedness • Low gate drive power loss Applications • Switching applications Description This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. Features Order code STP90N6F6 Table 1: Device summary Marking Package 90N6F6 TO-220 Packaging Tube March 2015 DocID025190 Rev 3 This is information on a produc

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