Datasheet4U Logo Datasheet4U.com

STP9NK60ZFDFP Datasheet N-CHANNEL Power MOSFET

Manufacturer: STMicroelectronics

📥 Download Datasheet

General Description

The Fast SuperMESH™ series associates all adINTERNAL SCHEMATIC DIAGRAM vantages of reduced on-resistance, zener gate protection and very goog dv/dt capability with a Fast DataSheet4U.com body-drain recovery diode.

Such series complements the “FDmesh™” Advanced Technology.

APPLICATIONS HID BALLAST s ZVS PHASE-SHIFT FULL BRIDGE CONVERTERS s DataShee ORDERING INFORMATION SALES TYPE STP9NK60ZFD STP9NK60ZFDFP STB9NK60ZFDT4 MARKING P9NK60ZFD P9NK60ZFDFP B9NK60ZFD PACKAGE TO-220 TO-220FP D2PAK PACKAGING TUBE TUBE TAPE & REEL July 2003 1/9 DataSheet4U.com DataSheet4U.com DataSheet 4 U .com www.DataSheet4U.com STP9NK60ZFD - STP9NK60ZFDFP - STB9NK60ZFD ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value TO-220 / D2PAK VDS VDGR VGS ID ID IDM ( ) PTOT VESD(G-S) dv/dt (1) VISO Tj Tstg Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Gate source ESD (HBM-C=100pF, R=1.5KΩ) Peak Diode Recovery voltage slope Insulation Withstand Voltage (DC) Operating Junction Temperature Storage Temperature -55 to 150 7 4.3 28 104 0.83 4000 TBD 2500 600 600 ± 30 7 (*) 4.3 (*) 28 (*) 32 0.26 TO-220FP V V V A A A W W/°C V V/ns V °C Unit ( ) Pulse width limited by safe operating area (1) ISD ≤7A, di/dt ≤200A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.

Overview

www.DataSheet4U.com STP9NK60ZFD - STP9NK60ZFDFP STB9NK60ZFD N-CHANNEL 600V - 0.85Ω - 7A TO-220/TO-220FP/D2PAK Fast Diode SuperMESH™ MOSFET TARGET DATA TYPE STP9NK60ZFD STP9NK60ZFDFP STB9NK60ZFD s s s s s s VDSS 600 V 600 V 600 V RDS(on) < 0.95 Ω < 0.95 Ω < 0.95 Ω ID 7A 7A 7A Pw 104 W 32 W 104 W 3 1 2 s TYPICAL RDS(on) = 0.

Key Features

  • OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to souce. In this respect the Zener voltage is appropriate to achieve an efficient and costeffective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. 2/9 DataSheet4U.

More Datasheets from STMicroelectronics

Part Number Description
STP9NK60ZFD N-CHANNEL Power MOSFET
STP9NK60ZFP N-CHANNEL Power MOSFET
STP9NK60Z N-CHANNEL Power MOSFET
STP9NK60ZD N-CHANNEL Power MOSFET
STP9NK65Z N-CHANNEL Power MOSFET
STP9NK65ZFP N-CHANNEL Power MOSFET
STP9NK50Z N-CHANNEL Power MOSFET
STP9NK50ZFP N-CHANNEL Power MOSFET
STP9NK70Z N-CHANNEL Power MOSFET
STP9NK70ZFP N-CHANNEL Power MOSFET