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STP9NK60ZD - N-CHANNEL Power MOSFET

Datasheet Summary

Description

The SuperFREDMesh™ series associates all advantages of reduced on-resistance, zener gate protection and very high dv/dt capability with a Fast body-drain recovery diode.

Such series compleINTERNAL SCHEMATIC DIAGRAM ments the “FDmesh™” Advanced Technology.

Features

  • OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to souce. In this respect the Zener voltage is appropriate to achieve an efficient and costeffective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. 2/12 DataSheet4U.

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Datasheet Details

Part number STP9NK60ZD
Manufacturer STMicroelectronics
File Size 839.54 KB
Description N-CHANNEL Power MOSFET
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www.DataSheet4U.com STP9NK60ZD - STF9NK60ZD STB9NK60ZD N-CHANNEL 600V - 0.85Ω - 7A TO-220/TO-220FP/D2PAK SuperFREDMesh™ MOSFET ADVANCED DATA TYPE STP9NK60ZD STF9NK60ZD STB9NK60ZD s s s s s s VDSS 600 V 600 V 600 V RDS(on) < 0.95 Ω < 0.95 Ω < 0.95 Ω ID 7A 7A 7A Pw 125 W 30 W 125 W 3 1 2 TYPICAL RDS(on) = 0.85 Ω VERY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED LOW INTRINSIC CAPACITANCES FAST INTERNAL RECOVERY DIODE TO-220 TO-220FP 3 1 DESCRIPTION The SuperFREDMesh™ series associates all advantages of reduced on-resistance, zener gate protection and very high dv/dt capability with a Fast body-drain recovery diode. Such series compleINTERNAL SCHEMATIC DIAGRAM ments the “FDmesh™” Advanced Technology. DataSheet4U.
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